Many embedded and mobile device uses flash memory as a secondary storage system. Performance of flash memory depends on
asymmetric speeds of read and write, limited number of erase times and the absence of in-place updates. The existing system virtual
memory uses Controlled Limit Cycles (CLC) combine with Flash Aware Buffer (FAB) and Block Padding Least Recently Used
(BPLRU) schemes for performance improvements. Cooperative write buffer cache (WBC) and virtual memory (VM) managements
are used to improve the performance of flash memory. Management on virtual memory is designed to exploit write buffer status via
reordering of the write sequences. Write buffer has been designed to improve the write performance of the flash memory. The
proposed scheme flash memory incorporates VM-WBC. Partition Cluster Least Recently Used (PCLRU) technique is implemented in
Write Buffer and Write Buffer Cache-Least Recently Used (WBC-LRU) technique is implemented in virtual memory. This enhanced
work is implemented in very large scale integrated (VLSI) platform in the form of hardware description language (VHDL) using
Xilinx tool. Thus the cooperative VM-WBC flash memory based system reduces write activities and improves the I/O performance.